MOSFET’s make very good electronic switches for controlling loads and in CMOS digital circuits as they operate between their cut-off and saturation regions. We saw previously, that the N-channel, Enhancement-mode MOSFET (e-MOSFET) operates using a positive input voltage and has an extremely high input resistance (almost infinite) making it possible to interface with nearly any logic gate or driver capable of producing a positive output.

We also saw that due to this very high input (Gate) resistance we can safely parallel together many different MOSFETS until we achieve the current handling capacity that we required.

While connecting together various MOSFETS in parallel may enable us to switch high currents or high voltage loads, doing so becomes expensive and impractical in both components and circuit board space. To overcome this problem Power Field-Effect Transistors or Power FET’s where developed.